http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20040069842-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_878f9c9f88073e75cc25a7a0e4773dc1 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0276 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-30 |
| filingDate | 2003-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0fb928303c40fe456b3b01a28de84e14 |
| publicationDate | 2004-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20040069842-A |
| titleOfInvention | Formation method of anti-reflection film |
| abstract | The present invention relates to a method for forming an antireflection film of a semiconductor device, and an object thereof is to cleanly form a photosensitive film pattern having a thickness of about 0.7 μm or less without a standing wave. To this end, in the present invention, in the photolithography process for manufacturing a semiconductor device, in forming the silicon oxynitride film and the oxide film as an anti-reflection film on the upper surface of the film to form a pattern, in order to form a silicon oxynitride film The flow rate of ethylene (SiH 4 ) is 20-100 sccm, the flow rate of helium is 1000-3000 sccm, the flow rate of N 2 O is 50-150 sccm, and the pressure is 2-10 Torr. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107513697-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107513697-B |
| priorityDate | 2003-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.