http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20040068027-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dfde87ca259d50a6ef377cf8988cde85 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/E04B1-80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/E04B1-942 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/E04C2-296 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F7-00 |
| filingDate | 2004-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0295f6d96a04456aa53ca76c0b4f9e1d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_de978e94a691c4e62d18a9ba29c072c4 |
| publicationDate | 2004-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20040068027-A |
| titleOfInvention | Organometallic precursor for ferroelectric ram and manufacturing method thereof |
| abstract | The present invention relates to an organometallic precursor (complex) of Formula 1, a preparation method thereof and an organometallic chemical vapor deposition method using the same, the organometallic precursor (complex) of the present invention has high thermal stability, excellent vaporization characteristics even at low temperatures Therefore, the thin film can be efficiently manufactured using metal organic chemical vapor deposition (MOCVD).n n n (Formula 1)n n n n n n n n n (Wherein M, m, n, R 1 , R 2 , R 3 , and R 4 are as defined in the specification). |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2009025523-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7491654-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8529795-B2 |
| priorityDate | 2003-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 57.