| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02043 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02129
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C15-00 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C03C15-00 |
| filingDate |
2002-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2004-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20040066938-A |
| titleOfInvention |
Method for preventing undesirable etching of contact hole sidewalls in a preclean etching step |
| abstract |
The present invention relates to a method of forming a contact of an integrated circuit between a first metallization layer and a silicon substrate. In one embodiment, the method comprises forming a premetal dielectric layer over a silicon substrate, etching contact holes through the premetal dielectric layer, and forming a thin silicon nitride layer on an outer surface of the contact hole. Include. The silicon nitride layer reduces overetching that may occur when the oxide formation is removed from the silicon interface in the contact hole by preclean treatment. After the preclean process, the contact holes are filled with one or more conductive materials. In various embodiments, the silicon nitride layer is formed by exposing the contact holes to a nitrogen plasma, depositing the layer by chemical vapor deposition, and depositing the layer by atomic layer deposition. In another embodiment, the method can be applied to form vias through an intermetallic dielectric layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10643858-B2 |
| priorityDate |
2002-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |