http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20040066574-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-92 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0273 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 |
| filingDate | 2003-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a8634f1c28aa74b4572c5cadd7097930 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2bc92920b7b6c4f28630366765c9587f |
| publicationDate | 2004-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20040066574-A |
| titleOfInvention | Method for fabricating MIS capacitor of semiconductor device |
| abstract | In the present invention, the photoresist pattern for storage node patterning is used only for the process of etching the anti-reflection film and the hard mask layer, and the cap oxide layer under the hard mask layer is etched with only the hard mask layer patterned by the photoresist pattern as a mask. A method of forming a MIS capacitor of a semiconductor device capable of improving a profile of the storage node pattern by forming a storage node pattern, the method comprising: sequentially forming a nitride film, a cap oxide film, a hard mask layer, and an antireflection film on a semiconductor substrate Wow; Forming a photoresist pattern on the anti-reflection film to define a storage node formation region; Sequentially etching the anti-reflection film and the hard mask layer using the photoresist pattern as a mask; Removing the photoresist pattern; Selectively etching a cap oxide layer using the hard mask layer as a barrier; Removing the hard mask layer and defining a storage node formation region. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100639207-B1 |
| priorityDate | 2003-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069 |
Total number of triples: 15.