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filingDate 2003-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_73970af8484c9fff4de6e82980be3df7
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publicationDate 2004-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20040066258-A
titleOfInvention Silicon optoelectronic device manufacturing method and Silicon optoelectronic device manufactured by thereof and Image input and/or output apparatus applied it
abstract Preparing an n-type or p-type substrate based on silicon, artificially forming a microdefect pattern on the surface of the substrate by etching, and forming a control film having openings on the microdefect pattern And extremely shallow in opposition to the substrate through an opening in the surface where the microscopic defect pattern of the substrate is formed so as to cause photoelectric conversion effect by quantum confinement effect at the pn junction with the substrate to cause light emission and / or light reception. Disclosed is a method for fabricating a silicon optical device, a silicon optical device manufactured by the same, and an image input and / or output device using the same.n n n As disclosed, not only is it more efficient than a light emitting device using silicon, but can be used as at least one of a light emitting device and a light receiving device, and a silicon optical device having high wavelength selectivity can be realized.n n n The silicon optical device panel obtained by arranging the disclosed silicon optical devices in a two-dimensional array can be applied to an image input and / or output device capable of directly inputting optical information into an image display and / or a screen.
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