| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7851
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0922
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 |
| filingDate |
2002-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2004-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20040065262-A |
| titleOfInvention |
Complementary mis device |
| abstract |
The CMOS device is a p-channel MOS transistor and an n-channel composed of a structure having another crystal plane formed on the (100) plane of the silicon substrate, a high quality gate insulating film formed by microwave plasma processing on the structure, and a gate electrode formed thereon. Including a MOS transistor, the dimensions and shapes of the structure are set so that carrier mobility is balanced between the p-channel MOS transistor and the n-channel MOS transistor. |
| priorityDate |
2001-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |