http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20040063138-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0277 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0035 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-00 |
| filingDate | 2002-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2004-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20040063138-A |
| titleOfInvention | Method for forming fine pattern |
| abstract | A step of coating a pattern forming coating-forming agent on a substrate having a photoresist pattern, a step of shrinking the pattern forming coating-forming agent by heat treatment, and narrowing the interval between the photoresist patterns by this heat shrinkage action; and Disclosed is a method of forming a fine pattern, wherein the step of removing the coating forming agent for pattern refinement is performed a plurality of times. According to the present invention, a substrate having excellent controllability of a pattern value, having a good profile and required characteristics in a semiconductor device, and having a photoresist pattern of a thick film having a film thickness of about 1.0 μm or more can be used. There is provided a method of forming a fine pattern that can obtain a fine pattern of a profile. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180038396-A |
| priorityDate | 2001-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 141.