http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20040061301-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3a17dc10b5bd6e5f0df2ce1aab3bbdce |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-44 |
| filingDate | 2002-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_68c07db77f93aead2d641665bb5b83f2 |
| publicationDate | 2004-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20040061301-A |
| titleOfInvention | Method and apparatus for fabricating a barrier metal layer of a semiconductor device |
| abstract | The present invention relates to a method and apparatus for forming a barrier metal layer of a semiconductor device. In the present invention, the barrier metal layer is improved to a single stack made of, for example, a TiSiN material, thereby suppressing an increase in the overall thickness of the barrier metal layer, and thereby, By blocking unnecessary cross-sectional area reduction, the wiring resistance of the wiring layer finally formed is minimized.n n n In addition, in the present invention, a precursor such as Tetra Di Ethyl Amido Titanium (TDEAT) or Tetra Di Methyl Amido Titanium (TDMAT) and an additive gas such as SiH 4 and NH 3 are added to one single chamber, thereby providing a TiSiN material. By forming a single barrier metal layer of, the process of plasma treatment of additive gas, deposition process of TiSiN raw materials, etc. simultaneously proceed in the isolation region in the single chamber, thereby naturally inducing the removal of unnecessary impurities involved in the deposition of TiSiN, Through this, the specific resistance value of the TiSiN film to be formed is suppressed to within an appropriate level.n n n According to the practice of the present invention, when the barrier metal layer is monolayered and low resistivity is realized, the manufacturing efficiency, quality, etc. of the final semiconductor device can be easily improved to a certain level or more. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101408506-B1 |
| priorityDate | 2002-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.