http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20040060576-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76232 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate | 2002-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_181192c24db5b45bd706c9c6cceeff84 |
| publicationDate | 2004-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20040060576-A |
| titleOfInvention | Method for preventing edge moat of sti |
| abstract | According to the present invention, a pad oxide film, a polysilicon film, a buffer oxide film, and a pad nitride film are sequentially formed on a substrate on which a predetermined substructure is formed, followed by etching to a predetermined depth of a polysilicon film by using a predetermined photoresist pattern, followed by an etching process. After oxidizing the polysilicon and its side, the trench is etched, buried into a gapfill oxide, and then planarized. Then, the pad nitride, the buffer oxide and the polysilicon layer are removed to form a thick oxide film on the active edge. The present invention provides a method of preventing edge mortgages using a polysilicon oxide film which can prevent the active edge portion from being eroded in a subsequent chemical process. |
| priorityDate | 2002-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 16.