http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20040060417-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02315 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate | 2002-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e5ba5b95a18cd29ad38964f20ee054f6 |
| publicationDate | 2004-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20040060417-A |
| titleOfInvention | Method for device isolation of semiconductor device |
| abstract | The present invention relates to a device isolation method of a semiconductor device, and a nitride film is formed between a trench surface and a field oxide film, and in a subsequent step, the nitride film is oxidized to expand the volume to remove the core at the center portion of the field oxide film. Subsequent short-circuit defects of the conductive wiring or defective device isolation can be prevented, thereby improving process yield and device reliability. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100613459-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180005630-A |
| priorityDate | 2002-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069 |
Total number of triples: 16.