http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20040059734-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-0335 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 |
| filingDate | 2002-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2bc92920b7b6c4f28630366765c9587f |
| publicationDate | 2004-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20040059734-A |
| titleOfInvention | Method for fabricating capacitor of semiconductor device |
| abstract | The present invention relates to a method of manufacturing a capacitor of a semiconductor device having a high stability of the process by preventing the pattern collapse phenomenon by placing the photoresist inside the cylinder during the cell separation process of the capacitor storage node, the front surface including a cell transistor Forming a nitride stopper layer, an insulating layer for separating cells, and a material layer for forming a hard mask on an ILD insulating layer formed on the substrate; Selectively etching the photolithography process to define a storage node formation region to expose the storage node contact plug layer; Depositing an amorphous polysilicon layer on the front surface and applying a photoresist for etch back; Etching the storage node polysilicon layer through an etch back process to form a storage node; And removing the photoresist after removing the insulating layer for separating between cells while the photoresist is inside the storage node cylinder. |
| priorityDate | 2002-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 14.