http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20040059452-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7684 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32135 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-283 |
| filingDate | 2002-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf30c40a58d3e69d910b0eb465bfe4df |
| publicationDate | 2004-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20040059452-A |
| titleOfInvention | Method for protecting demage of electric conductor in semiconductor process |
| abstract | The present invention discloses a method for preventing damage to a conductor in a semiconductor process by masking an upper surface of a conductor in which voids are opened due to chemical mechanical polishing, thereby preventing damage to the lower conductor during contact or plug formation.n n n The method for preventing conductor damage in the semiconductor process of the present invention forms a lower conductor having a hard mask made of plasma deposited nitride thereon, and forms a plug poly in a specific region by chemical mechanical polishing, wherein the hard mask and the By forming an auxiliary mask between the lower conductors, when a void that can be formed in the hard mask is opened by the chemical mechanical polishing, a contact between the conductor and the chemical that penetrates through the open voids in a subsequent cleaning process is prevented. You can prevent it. |
| priorityDate | 2002-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.