| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-65
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B53-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823475
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-55 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 |
| filingDate |
2002-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_04111c9c6f2938a0610d97e00242a51f |
| publicationDate |
2004-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20040059391-A |
| titleOfInvention |
Method for forming of ferroelectric capacitor |
| abstract |
According to the present invention, the lower electrode of the capacitor is formed by electroplating using a ferroelectric material, and at the same time, the bit line contact is formed to secure contact contact characteristics with the active of the silicon substrate and to secure alignment margins, thereby improving process reliability. There is an advantage to this. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7294876-B2 |
| priorityDate |
2002-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |