http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20040057964-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_069302aee0d7eee291cd1e0ffa662781
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
filingDate 2003-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_958402feb55ffbe15af21545d699b734
publicationDate 2004-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20040057964-A
titleOfInvention Manufacturing method for semiconductor device
abstract An object of the present invention is to form a conductor film in a wiring groove formed in a porous low dielectric constant film with good coverage and high adhesion.n n n A porous MSQ 2 is formed on the silicon substrate 1, and a SiC mask 3 is formed thereon. The silicon substrate 1 including the wiring grooves 5 in the porous MSQ 2 by plasma etching using the SiC mask 3 as a mask, and including the side surfaces of the wiring grooves 5 using plasma of the deposition gas. ) The deposition film 7 is formed on the entire surface. Thereafter, the unnecessary deposition film 7 formed outside the sidewalls of the wiring grooves 5 is removed by sputter etching, and a conductor film is formed in the wiring grooves 5.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100847843-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100768474-B1
priorityDate 2002-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID458392451
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID297
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559581
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID458393636

Total number of triples: 23.