http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20040056846-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_878f9c9f88073e75cc25a7a0e4773dc1 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02057 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3213 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate | 2002-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0ebc8399f0f183663a5ed927d8767049 |
| publicationDate | 2004-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20040056846-A |
| titleOfInvention | Manufacturing method of semiconductor device |
| abstract | The present invention provides a method for manufacturing a semiconductor device to remove the metallic polymer after etching, according to the manufacturing method is a first titanium nitride film, a metal thin film and a second titanium nitride film sequentially stacked on the structure of the semiconductor substrate A photoresist is applied on the second titanium nitride film, and then patterned to form a first pattern. The first pattern is etched to the interlayer insulating film of the structure, and then the first pattern is removed. Etching the metal; Forming a pad oxide film on the structure of the semiconductor substrate etched; Depositing a passivation nitride thickly on the pad oxide film to form a pad nitride film; When the pad nitride layer is formed, a photoresist is coated on the pad nitride layer, and a second pattern is formed. The second pattern is used as a mask to perform etching, and the second nitride layer of the pad nitride layer, the pad oxide layer, and the metal wiring is formed. Etching the film at once and removing the formed second pattern; Inserting the semiconductor substrate into the chamber and supplying a CxFy-based gas and simultaneously removing the metallic polymer formed on the sidewalls etched using plasma; And cleaning the semiconductor substrate from which the polymer has been removed. |
| priorityDate | 2002-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.