http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20040056431-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76819 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-35 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 |
| filingDate | 2002-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_533a6528ead16b929839b3dfd819ec1a |
| publicationDate | 2004-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20040056431-A |
| titleOfInvention | Method of manufacturing flash memory device |
| abstract | According to the present invention, a high density plasma oxide film having excellent gap fill characteristics is formed on an entire structure of a semiconductor substrate on which gate electrodes are formed, and a planarization insulating film having excellent flatness is formed after application due to a high viscosity on the high density plasma oxide film, but the high density plasma oxide film and the planarization insulating film The NAND data flash memory device can form a buffer insulating film for controlling the polishing rate during the chemical mechanical polishing process, and then perform the chemical mechanical polishing process, thereby eliminating a step at the boundary between the cell region and the peripheral circuit region. It relates to a method for producing. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101055855-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107871743-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107871743-B |
| priorityDate | 2002-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.