http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20040055463-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3086 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate | 2002-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_24902c8fc8da62e882c8111f992be987 |
| publicationDate | 2004-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20040055463-A |
| titleOfInvention | Method for forming isolation layer in semiconductor device |
| abstract | The present invention relates to a method of forming a device isolation film of a semiconductor device, comprising the steps of forming an antireflection film on a semiconductor substrate, forming a photoresist pattern defining a region to be separated on the antireflection film, and using the photoresist pattern as an etch barrier. Etching the anti-reflection film to expose the surface of the substrate, removing the photoresist pattern, forming a shallow trench by etching the substrate a predetermined depth with the remaining anti-reflection film as an etch barrier, and thermally oxidizing the resultant. Forming a thermal oxide film inside the trench by forming a process, forming a gapfill oxide film on the entire surface of the substrate including the thermal oxide film, etching the gapfill oxide film to expose the remaining antireflection film, and etching the antireflection film. Forming a device isolation film. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11374106-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11342441-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11342438-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11342442-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11456370-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11349011-B2 |
| priorityDate | 2002-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.