http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20040055347-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_878f9c9f88073e75cc25a7a0e4773dc1 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2002-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0fb928303c40fe456b3b01a28de84e14 |
| publicationDate | 2004-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20040055347-A |
| titleOfInvention | Fabrication method of semiconductor device |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, the purpose of which is to prevent impurities from moving in an impurity-containing oxide film to lift up the metal wiring and the oxide film. To this end, the present invention comprises the steps of sequentially forming a first diffusion suppression film, an impurity containing oxide film, and a second diffusion suppression film on the semiconductor structure including the lower metal wiring; Selectively etching the second diffusion suppressing film and the oxide-containing oxide film having a predetermined thickness to form a metal wiring hole; Forming a third diffusion suppression film on an upper front surface of the metal wiring hole and including a second diffusion suppression film; Selectively etching the third diffusion suppressing layer and the impurity-containing oxide layer on the metal interconnection to form a via exposing a portion of the lower metal interconnection; And filling the via with a metal material. |
| priorityDate | 2002-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.