http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20040055018-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02129 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate | 2002-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dee46fc25967bc0176f1e30ed39d8b63 |
| publicationDate | 2004-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20040055018-A |
| titleOfInvention | Method of manufacturing a semiconductor device |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of fabricating a semiconductor device, wherein each of the first and second trenches having a low aspect ratio is buried in an HDP oxide film and a thermal oxide film to form a device isolation film having a high aspect ratio so that voids are not formed in the device isolation film. A method for manufacturing a semiconductor device is provided. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112164648-A |
| priorityDate | 2002-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID977 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419523291 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069 |
Total number of triples: 16.