http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20040054442-A

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filingDate 2002-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_59db47f9840ab5eb3a90ae3a35b70dbe
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publicationDate 2004-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20040054442-A
titleOfInvention Method for Manufactuing Quantum Dot Using Selective Area Growth And Optical Device using the same
abstract The present invention proposes a method of selectively opening a dielectric thin film on a substrate to form quantum dots in this region, thereby controlling the wavelength of the quantum dots. It is possible to have different quantum dot wavelengths at the same time by allowing different selective areas depending on the location. By utilizing these techniques, the width of the wavelength band can be adjusted, or a photon integrated circuit device in which various functions are integrated on a single chip. Can be implemented.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011119231-A3
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priorityDate 2002-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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