http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20040054145-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66477 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2002-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_62fd01c20902429cabb6031ac168c508 |
| publicationDate | 2004-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20040054145-A |
| titleOfInvention | Method of manufacturing a transistor in a semiconductor device |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a transistor of a semiconductor device, wherein a first insulating film spacer is formed on a lower side of a gate having a predetermined pattern to generate a step, and then a second insulating film spacer is formed on the entire side of the gate to form a first insulating film spacer. And forming an L-type insulating layer spacer formed of the second insulating layer spacer and then forming a source drain having a double structure by an ion implantation process, thereby reducing the depth around the gate to reduce the short channel effect and the junction leakage current. A method of fabricating a transistor of a semiconductor device is disclosed, which can improve process reliability and device electrical properties by easily forming a double structured source / drain that can reduce the size of the device and provide sufficient depth near the device isolation region. . |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10522422-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9997417-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160034156-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9502412-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10163730-B2 |
| priorityDate | 2002-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.