http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20040053456-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3a17dc10b5bd6e5f0df2ce1aab3bbdce |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28562 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76862 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2002-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_01df867fdbef055463ef34063dc03c83 |
| publicationDate | 2004-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20040053456-A |
| titleOfInvention | Method For Forming Barrier Metal |
| abstract | The present invention discloses a method for forming a barrier metal layer of a semiconductor device. According to this, by stacking the SiH 4 layer (or Si layer) in the contact hole of the semiconductor device using the atomic layer stacking method, and the precursor layer on the SiH 4 layer (or Si layer), the SiH 4 layer (Or Si layer) and the material of the precursor layer react with each other to form a TiSiN layer. By repeating such an atomic layer deposition method, the TiSiN layer can be formed thick with a desired thickness. The TiSiN layer is then plasma treated with an atmosphere of hydrogen (H 2 ) gas and nitrogen (N 2 ) gas or an atmosphere of ammonia (NH 3 ) gas to remove impurities in the TiSiN layer.n n n Therefore, it is not only easy to form a thick TiSiN layer, but also it is possible to reduce the specific resistance of the TiSiN layer relatively low. This reduces the contact resistance of the TiSiN layer for the barrier metal layer and further improves the electrical characteristics of the semiconductor device. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019014170-A1 |
| priorityDate | 2002-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.