| abstract |
The present invention relates to a composition for forming a porous interlayer insulating film comprising a new pore-forming material, and more particularly, a pore-forming material which is a gemini-type surfactant, a quaternary alkylammonium salt or a mixture thereof; Thermally stable organic or inorganic matrix precursors; And it relates to a composition for forming a porous interlayer insulating film comprising a solvent for dissolving the material, the present invention can provide an interlayer insulating film for semiconductors excellent in mechanical properties such as hardness, modulus and moisture absorption resistance. |