abstract |
According to the present invention, in the process of forming a micro pattern using a photoresist for lithography using 193 nm ArF in a semiconductor device manufacturing process, it is possible to prevent reflection of a lower layer layer and remove standing waves due to changes in thickness of light and photoresist itself. The present invention relates to a polymer for an organic antireflection film and a method for producing the same, which can increase the uniformity of a photoresist pattern. The present invention also relates to an organic antireflection film composition containing such a polymer for an organic antireflection film, an organic antireflection film using the same, and a method of manufacturing the same. |