http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20040044525-A
Outgoing Links
Predicate | Object |
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classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45565 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45574 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45523 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 |
filingDate | 2002-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2004-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-20040044525-A |
titleOfInvention | Film forming method |
abstract | The present invention relates to a method of forming a metal nitride film on a surface of a workpiece in a vacuum suctionable processing container. The method of the present invention includes a step of continuously supplying an inert gas into a processing vessel at a low film forming temperature, and a step of intermittently supplying a metal source gas into the processing vessel during the continuous supply process of the inert gas. In the intermittent supply process of the metal source gas, nitrogen-containing reducing gas is supplied into the processing vessel simultaneously with the supply of the metal source gas during the supply period of the metal source gas. In the intermittent supplying step of the metal source gas, the nitrogen-containing reducing gas is supplied into the processing container for a period shorter than the intermittent period during the supply period of the metal source gas. According to the present invention, it is possible to deposit a metal nitride film having a low chlorine concentration, a low resistivity, a suppression of cracks, and no abnormal growth of the film. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20210006499-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100640550-B1 |
priorityDate | 2001-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.