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filingDate 2003-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d40186180cfeae94c612455d00fb0b2f
publicationDate 2004-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20040038855-A
titleOfInvention Heterojunction bipolar transistor
abstract A heterojunction bipolar transistor comprising a collector layer 104, a base layer 105 and an emitter layer 106, the HBT 100 comprises a collector layer 104, a base layer 105 and an emitter layer 106, respectively. c, has a different lattice constant a b and a e, a value of a b a c a is configured to be placed between a e (me changed, the value of a c, a b and a e is a c> a b > a e or a c <a b <a e . According to the present invention, HBTs having high reliability are realized without significantly changing existing equipment and processes for manufacturing HBTs.
priorityDate 2002-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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