http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20040032259-A

Outgoing Links

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filingDate 2002-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9c3f09754b71619a7636c02bedfde90c
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publicationDate 2004-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20040032259-A
titleOfInvention Pattern forming method of semiconductor device
abstract BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming a pattern of a semiconductor device. In particular, in the process of forming a photoresist pattern of a semiconductor device, an anti-reflection film is etched to form fine bends, thereby forming a gap between the photoresist and the antireflection film. The present invention relates to a method for forming a pattern of a semiconductor device, by increasing the contact area of the photoresist to prevent the photoresist pattern from collapsing.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100976651-B1
priorityDate 2002-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 25.