http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20040032104-A

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filingDate 2002-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2004-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20040032104-A
titleOfInvention Laser diode with an internal mirror
abstract A semiconductor laser having a distributed feedback laser region 12 and an amplifier region 14. The amplifier region 14 is tapered to lower the optical power density, especially in the output facet 18 of the laser. The semiconductor laser 10 also includes a reflecting element 24 that reflects light 17 from the distributed feedback laser region 12 to the amplifier region 14. The reflecting element 24 bends the optical path O p of the light beam. Bending the optical path O p allows the amplifier region 14 space to be increased without increasing the semiconductor die size. Larger amplifier area 14 will increase the output power of the laser. Similarly, reflective element 24 allows to reduce semiconductor die size without reducing the optical power of the laser.
priorityDate 2001-06-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 24.