http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20040031105-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J9-227 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J9-2278 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J29-327 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J29-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J9-227 |
| filingDate | 2002-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2004-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20040031105-A |
| titleOfInvention | Method of manufacturing a matrix for cathode-ray tube |
| abstract | On the inner surface of faceplate panel 12 of a cathode-ray tube (CRT), a method of manufacturing a light emitting screen assembly having a light absorbing matrix 23 having a plurality of almost equally sized openings is provided. The tube has color selection electrodes 25 spaced apart from the inner surface of the faceplate panel, and the color selection electrodes have a number of strands with slots 33 sandwiched therebetween. The method includes providing a first photoresist layer 56 wherein the solubility of the first photoresist layer is altered when more light radiation is exposed to light to reduce its solubility. The first photoresist layer is provided on the inner surface of the faceplate panel. The first photoresist layer is exposed to light from a light source disposed with respect to the center light source position and two symmetric light source positions relative to the center light source position. Exposure selectively alters the solubility of the illuminated regions of the first photoresist layer, creating regions with greater solubility and regions with less solubility. Areas of higher solubility are subsequently removed to not cover areas of the inner surface of the faceplate panel, while areas of smaller solubility are retained. The inner surface and retention area of the faceplate panel are then overcoated with a light absorbing material. The retention region of the first photoresist layer and the light absorbing material thereon are then removed to define a first guard zone of the light absorbing material on the inner surface of the faceplate panel without covering the faceplate panel portion. This photolithographic process is repeated for the second photoresist layer and the third photoresist layer to define a second guard band of light absorbing material and a third guard band of light absorbing material, respectively. However, the light source positions for the second photoresist layer and the third photoresist layer are disposed in an asymmetrical position with respect to the central light source position. |
| priorityDate | 2001-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.