| abstract |
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a low dielectric material for improving performance when used as an interlayer insulator in an IC circuit, a low dielectric thin film made thereof, and a manufacturing method thereof. These materials are characterized by a dielectric constant (k) of about 3.7 or less, partially normalized wall modulus (E o ') obtained from the dielectric constant of about 15 GPa or more, and metal impurity levels of about 500 ppm or less. do. Also disclosed are low dielectric materials having a dielectric constant of less than about 1.95 and partially normalized wall modulus (E o ') derived from the dielectric constant of at least about 26 GPa. |