http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20040029867-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_878f9c9f88073e75cc25a7a0e4773dc1 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76871 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate | 2002-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_25f9ca79be68dceac3fff9df73b2d8e8 |
| publicationDate | 2004-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20040029867-A |
| titleOfInvention | Fabrication method of semiconductor device |
| abstract | The present invention relates to a method for manufacturing a semiconductor device, the purpose of which is to ensure the flattening of copper without deducting when forming the copper wiring and to prevent defects around the vias. To this end, in the present invention, before forming the copper plating layer to fill the vias, a plating prevention film is formed on the copper seed layer positioned on the interlayer insulating film so that the copper plating layer is not formed on the upper portion of the interlayer insulating film but formed only on the top of the via. As a result, there is no need to perform overpolishing to remove copper located above the interlayer insulating film, thereby preventing the copper from dripping. |
| priorityDate | 2002-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.