http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20040028926-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31612 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate | 2002-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2004-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20040028926-A |
| titleOfInvention | A Method of Depositing a Dielectric Film |
| abstract | The present invention relates to a method for depositing a dielectric thin film on a surface of a substrate having at least some spacing of metal lines of 4 μm to 20 μm, the method comprising: at least one silane containing gas to form a thin film on the surface of the substrate in a chamber; And reacting at least one oxygen or oxygen containing gas in the chamber, wherein the chamber pressure is less than 850 mT, and the spacing between the metal lines is sufficiently filled by at least the thin film. |
| priorityDate | 2001-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.