| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-952
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-942 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0275
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76811
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3122
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 |
| filingDate |
2003-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6ebe8b8d3fdcf42788496d0b15ea1ec3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_495f6fd4092e9651aecb86d3eefd7fe3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_24ae4af68324cc7ddeaf78a009c32fb9 |
| publicationDate |
2004-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20040026595-A |
| titleOfInvention |
Process of manufacturing semiconductor device and process of forming pattern |
| abstract |
An object of the present invention is to provide a method for manufacturing a semiconductor device and a method for forming a pattern that can easily form a fine pattern with a high aspect ratio with high accuracy.n n n The manufacturing method of the semiconductor device of this invention is a manufacturing method of the semiconductor device using the laminated film for pattern formation formed on the board | substrate, The laminated film for pattern formation has a surface layer (upper layer), an inner layer (middle layer), and an innermost layer (lower layer), (A) The extinction coefficient k of the innermost layer is 0.3 or more and the extinction coefficient k of the inner layer is 0.12 or more, (B) The extinction coefficient k of the innermost layer is less than 0.3 and the extinction coefficient k of the inner layer is It is either one of 0.18 or more. |
| priorityDate |
2002-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |