http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20040020241-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-75 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-91 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 |
| filingDate | 2002-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1fc0c194cd8c9412a96aad787445fa56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a1d9fadc1fb10710189a34b54e933c9a |
| publicationDate | 2004-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20040020241-A |
| titleOfInvention | Method for forming capacitor of semiconductor device |
| abstract | The present invention discloses a method for forming a capacitor, and the disclosed method for forming a capacitor includes depositing an interlayer insulating film on a semiconductor substrate on which a predetermined underlayer is formed, and contact plugs contacting a predetermined portion of the substrate in the interlayer insulating film. Forming a sacrificial oxide film on the interlayer insulating film including the contact plug, etching the sacrificial oxide film to form a contact hole exposing the contact plug and an adjacent region thereof, and forming the contact hole; Depositing a first polysilicon film on a surface and a sacrificial oxide film, removing a portion of the first polysilicon film deposited on the sacrificial oxide film, and removing the sacrificial oxide film to form a lower electrode made of polysilicon And nitriding the lower electrode surface; and Y as a dielectric film on the nitrided lower electrode. Depositing an ON thin film, heat treating a substrate resultant on which the YON thin film is deposited, depositing a TiN film as a barrier film on the heat-treated YON thin film, and a second poly for upper electrode on the TiN film Depositing a silicon film and patterning a second polysilicon film, a TiN film, and a YON thin film to form the upper electrode. According to the present invention, by using a YON film having a high dielectric constant of about 25 as the material of the dielectric film, it is possible to easily secure the charge capacity required for stable device operation in accordance with high integration of the device. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-100463186-C http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7741671-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7498628-B2 |
| priorityDate | 2002-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.