http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20040019170-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1089 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76876 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76862 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2002-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7ffc826be468c9ffe724e9a79e774bcf http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7e3c7e3da2bd2f3a6ae5c2a9274e93e8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c9177da6cfbe15636b58f4090d44a61b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_192a4b8846498eb8ce8e6d9b459fc578 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a222673742d210bf61d51e63f7f1829c |
| publicationDate | 2004-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20040019170-A |
| titleOfInvention | Method of forming Al contact |
| abstract | A method of forming an aluminum contact is provided. This method forms an interlayer insulating film on a semiconductor substrate, and patterns the interlayer insulating film to form a recessed region. A conformal metal film along the profile of the recessed region is formed on the front surface of the semiconductor substrate having the recessed region. Plasma treatment is applied to the surface of the metal film. In this case, the metal film on the upper surface of the interlayer insulating film is further subject to the plasma treatment relative to the metal film in the recessed region. Accordingly, when the aluminum film is formed on the plasma treated semiconductor substrate, the deposition rate of the aluminum film in the recessed region may be controlled to be faster than the deposition rate of the aluminum film on the upper surface of the interlayer insulating film. . As a result, the inside of the recessed region can be completely filled without voids with the aluminum film, thereby forming a reliable aluminum contact. In addition, the aluminum film may be deposited by supplying MPA as a source gas at a low temperature of 160 ° C. or lower to obtain a smooth surface morphology and densified film quality. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100746624-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100891524-B1 |
| priorityDate | 2002-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.