| abstract |
In a method of forming a metal oxide film using an atomic layer deposition method and a method of forming a capacitor of a semiconductor device using the same, a metal precursor containing an amino group is introduced onto a substrate to chemically adsorb a portion of the precursor on the substrate. Thereafter, precursors that are not chemically adsorbed are removed. An oxidant is then introduced onto the substrate to chemically react the chemically adsorbed metal precursor with the oxidant to form an oxide film on the substrate. An oxide film having a high deposition rate and improved deposition characteristics is obtained. In addition, it is possible to form a thin oxide thin film having improved step coverage and reduced pattern loading rate. |