| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1fad0246171945d5e4957c9be0b37a2f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-12 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05B33-10 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J9-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09F9-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09F9-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J9-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B33-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B33-10 |
| filingDate |
2003-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7c9ae9ae15f74b5c5c8c8caeff1cd095 |
| publicationDate |
2004-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20040010135-A |
| titleOfInvention |
Method of manufacturing a display device |
| abstract |
When forming a thin film by the electron beam evaporation method on the board | substrate with which the thin film transistor was formed, the technique for forming a desired thin film without causing abnormality of the characteristic of a thin film transistor is provided. In this technique, in forming a thin film by an electron beam deposition method on an electrode electrically connected to a thin film transistor, when the electron beam is irradiated to the deposition material for forming the thin film, the electrons are not substantially radiated from the deposition material. It characterized by controlling the acceleration voltage of. Substantially preventing radiation from radiating indicates controlling the acceleration voltage of the electrons so that the thin film transistor is not degraded by the radiation emitted from the deposition material. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100719104-B1 |
| priorityDate |
2002-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |