http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20040008447-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0276 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2002-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_00835409e0dcde857f1ba135a13505a6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e809e8fb7679e5b27c3707d1d6daa38 |
| publicationDate | 2004-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20040008447-A |
| titleOfInvention | Method for manufacturing a plug of semiconductor device |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming a plug of a semiconductor device, and in particular, a polycrystalline silicon layer for forming a plug and a bottom anti reflective coating (BARC) layer are laminated, and the BARC layer is etched by a photolithography process using a contact mask. After forming a BARC pattern having an inclined profile, the polycrystalline silicon layer is etched using the BARC pattern as a mask in the same etching chamber as the etching process to form a plug. The plug is formed by a process using a BARC pattern with a photo profile as a mask, thereby reducing the number of processes compared to the prior art, overcoming the limitations of the photolithography process, and securing an overlay margin to control the diameter size of the plug. In the same etching chamber, the BARC layer and the polycrystalline silicon layer are etched to reduce the delay time between processes. It is a technology to improve the integration, yield and reliability of the device by preventing the formation of a natural oxide film is not exposed to the air. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10043889-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9806168-B2 |
| priorityDate | 2002-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.