| abstract |
An object of the present invention is to provide a nitride semiconductor device having a counter electrode structure and a method of manufacturing the same.n n n On at least one main surface of the growth substrate 1 having two opposite main surfaces and having a thermal expansion coefficient larger than that of the n-type or p-type nitride semiconductor layer, at least the n-type nitride semiconductor layers 2-5, the active layer 6, , p-type nitride semiconductor layers 7 to 8 are grown to form a laminate for bonding. Subsequently, a first bonding layer 9 composed of at least one metal layer is formed on the p-type nitride semiconductor layer 8, and has two main surfaces facing each other, which is larger than the n-type and p-type nitride semiconductor layers and is formed on the growth substrate. A second bonding layer 11 made of one or more metal layers is formed on one main surface of the support substrate 10 having a coefficient of thermal expansion equal to or less than. Subsequently, the first bonding layer 9 and the second bonding layer 11 are opposed to each other, and the bonding laminate and the support substrate 10 are heated and press-bonded to each other. Thereafter, the growth substrate 1 is removed from the laminate for bonding to obtain a nitride semiconductor element. |