http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20040005510-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B20-38 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B69-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 |
| filingDate | 2002-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_caa1cb842863b790659f2db83c2b4cd5 |
| publicationDate | 2004-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20040005510-A |
| titleOfInvention | Method for forming the semiconductor device |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device. In particular, in a method for forming a BN structure of a memory device, an anisotropic etching is performed on a silicon substrate by controlling an etching gas, a gas pressure, a magnetic field, and the like. Forming a BN junction around the trench by implanting BN ions vertically, and forming a BN layer by burying an oxide film in the trench to form a BN layer. It is possible to increase the operating speed of the BN junction technology to improve the stabilization of the characteristics and reliability of the semiconductor device. |
| priorityDate | 2002-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 15.