http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20040002016-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-49 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-30 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 |
| filingDate | 2002-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6cb81e307d860040bc940e35cbfbe9f3 |
| publicationDate | 2004-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20040002016-A |
| titleOfInvention | Method of manufacturing a semiconductor device |
| abstract | The present invention relates to a method for manufacturing a semiconductor device, wherein the gate electrode patterns of the cell region and the peripheral circuit region are simultaneously formed using a hard mask layer, and then the gate electrodes of the cell region and the peripheral circuit region are formed independently from each other. As a result, the overlapping problem between the etching margin for forming the gate electrode and each layer for forming the gate electrode can be solved, and the damage of the gate electrode sidewall and the gate oxide layer can be prevented, and the shape of the gate electrode in the cell region and the peripheral circuit region can be solved. Provided is a method of manufacturing a semiconductor device that can be formed vertically. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100796505-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100713914-B1 |
| priorityDate | 2002-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.