http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20040001865-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76229 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate | 2002-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_44b02ffe4112ddcd5ce53c15655f8fae |
| publicationDate | 2004-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20040001865-A |
| titleOfInvention | Method for forming trench type isolation layer in semiconductor device |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to semiconductor manufacturing techniques, and more particularly, to a device isolation process for electrical isolation between devices, and more particularly to a trench device isolation process. SUMMARY OF THE INVENTION An object of the present invention is to provide a method of forming a trench type isolation layer for a semiconductor device, which can reduce a warpage degree of a wafer due to stress imbalance between a wafer front surface and a back surface during a trench type isolation process. The deformation (warping) of the wafer is due to the stress imbalance of the film deposited on the wafer. Films deposited simultaneously on the front and back sides of the wafer have the same characteristic stress on both sides of the wafer, and thus do not contribute to warpage of the wafer, but films deposited on only one side of the wafer bend the wafer according to the characteristic stress. In general, the nitride film has a tensile stress while the oxide film has a compressive stress. Therefore, when the nitride film and the oxide film are on one side, the stresses cancel each other out, and if they are on the opposite side, the deformation will be larger. The present invention removes the pad nitride film on the back surface of the wafer prior to depositing the trench buried oxide film, thereby balancing the tensile stress of the pad nitride film on the front surface of the wafer with the compressive stress of the trench buried oxide film, thereby reducing warpage of the wafer. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100463172-B1 |
| priorityDate | 2002-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069 |
Total number of triples: 14.