| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b5b9f9cd8f41ddd9b8e5bc26a4d68518 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-409
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-55
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F7-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F7-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F7-003 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-18 |
| filingDate |
2002-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3d88383d5420a0b559eda5ae2580c9fd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2ac4afc4b001d49f09a062d8b5ebad68
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a1d0c1168717b8f5ef29ac140c23478 |
| publicationDate |
2003-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20030097087-A |
| titleOfInvention |
Process for the formation of pzt thin film by metal-organic chemical vapor deposition |
| abstract |
The present invention relates to a method for preparing a lead zirconate titanate (PZT) thin film using an organometallic chemical vapor deposition method, Pb (methd) 2 represented by the following Chemical Formula 1, Zr (methd) 4 represented by the following Chemical Formula 2, and the following Chemical Formula 3 According to the method of the present invention comprising vaporizing a single mixed precursor solution comprising Ti (mpd) (methd) 2 and then depositing it on a substrate in a temperature range of 360 to 560 ° C., PZT having the required composition Thin films can be easily produced: |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7498724-B2 |
| priorityDate |
2002-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |