| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-30 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 |
| filingDate |
2002-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6cb81e307d860040bc940e35cbfbe9f3 |
| publicationDate |
2003-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20030094940-A |
| titleOfInvention |
Method of manufacturing a semiconductor device |
| abstract |
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device, and more particularly, to a method of manufacturing a semiconductor device capable of securing a process margin for forming a polysilicon spacer on a sidewall of a floating gate electrode of a flash memory device. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7745284-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100578646-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20120044725-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101258256-B1 |
| priorityDate |
2002-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |