| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4554
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45546
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3185 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 |
| filingDate |
2002-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2bc172f1059f982cdfc865ef0615d0f7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_64862d96c71694676103ca3da7e4944a |
| publicationDate |
2003-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20030093844-A |
| titleOfInvention |
Method of forming a thin film with a low hydrogen contents |
| abstract |
A thin film formation method for reducing the hydrogen content in a thin film is disclosed. After placing the substrate inside the chamber, the reactant material is introduced into the chamber. A portion of the reactant is chemisorbed onto the substrate. The substrate is treated with a nitrogen (N 2 ) remote plasma to reduce the hydrogen content in the layer of reactant chemically adsorbed on the substrate. Since hydrogen bonds in the reactive material layer chemisorbed on the substrate are removed by the N 2 remote plasma treatment, a thin film having a low hydrogen content can be produced. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100631951-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100738836-B1 |
| priorityDate |
2002-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |