http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20030092600-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45527 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28194 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-08 |
| filingDate | 2002-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f869400053f99a033390946335207aff |
| publicationDate | 2003-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20030092600-A |
| titleOfInvention | Atomic layer deposition of oxide film |
| abstract | The present invention is to provide an atomic layer deposition method suitable for preventing a decrease in deposition rate by supplying a source once during a cycle, the atomic layer deposition method of the oxide thin film of the present invention is an alkoxide-based source [MOR] and a halogen-based source [ MX] is alternately supplied to deposit an oxide thin film (MO), wherein in the alkoxide-based source [MOR], M is one selected from the group consisting of Ti, Ta, Zr and Hf, and R is methyl (CH 3 ). , Ethyl (C 2 H 5 ), butyl (C 4 H 9 ,) and propyl (C 3 H 7 ) It is one selected from the alkyl group, in the halogen source [MX] M is Ti, Ta, Zr and One selected from the group consisting of Hf, wherein X is Cl. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7642200-B2 |
| priorityDate | 2002-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.