http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20030092501-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-495 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28079 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2002-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8fe55487dcbaaa8884947fdaecd83295 |
| publicationDate | 2003-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20030092501-A |
| titleOfInvention | Method of forming a gate in a semiconductor device |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a gate of a semiconductor device, wherein the conductive layer formed on the gate oxide film is etched in two steps using a fluorine-based plasma and a chlorine-based plasma to form a gate, thereby damaging the lower gate oxide film by one etching process. The method for forming a gate of a semiconductor device can be prevented, and since the etching stop film is not required, the gate structure of the semiconductor device can be prevented from being destroyed by the oxidation of the etching stop film in a subsequent heat treatment process. |
| priorityDate | 2002-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.