| abstract |
The present invention relates to a method of depositing a low dielectric constant insulating film, a thin film transistor using the same, and a method of manufacturing the same. More particularly, a low dielectric constant insulating film is formed by using a silane gas when forming an insulating film by depositing an insulating film by CVD or PECVD. It is possible to solve the parasitic capacitance problem by largely improving the deposition rate while maintaining the physical properties of the film, and to realize a high opening ratio structure, and to reduce the process time, a method of depositing a low dielectric constant insulating film of a semiconductor device, a thin film transistor using the same, and fabrication thereof It is about a method. |