http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20030089202-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-75 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 |
| filingDate | 2002-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_acde57e25ea7bcf491714432c1d0d650 |
| publicationDate | 2003-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20030089202-A |
| titleOfInvention | Method for forming capacitor of semiconductor device |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a capacitor of a semiconductor device, and in particular, a semiconductor device capable of improving the degree of integration by preventing electrical shorts between the upper and lower electrodes by a relatively simple process and making the same size between the two electrodes. In order to provide a method for forming a capacitor, the present invention comprises the steps of depositing a lower electrode metal film, a dielectric material film and an upper electrode metal film on a substrate; Sequentially depositing a first hard mask material film made of the same material as the lower electrode metal film and a second hard mask material film to be used as an etching mask of the dielectric material film on the upper electrode metal film; Forming a photoresist pattern for forming a capacitor on the material layer for the second hard mask; The photoresist pattern is an etch mask, and the second hard mask material layer, the first hard mask material layer, and the upper electrode metal layer are selectively etched to stack an upper electrode, a first hard mask, and a second hard mask. Forming a structure; Selectively etching the dielectric material layer using at least the second hard mask as an etch mask to form a dielectric film; And forming a lower electrode by selectively etching the lower electrode metal layer using at least the first hard mask as an etching mask. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100725451-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100721626-B1 |
| priorityDate | 2002-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.