| abstract |
The present invention adopts the principle of photophysical mass transfer of azobenzene compounds, rather than conventional photochemical reactions depending on the properties of photosensitive materials, to obtain a mask manufacturing technique with high selectivity in a large area, and to shrink and expand materials by photoreaction. It provides a etching mask fabrication process by a single exposure process that does not cause deformation problems such as the like, but does not require a post-processing step, such as a developing step, which is a step of removing the stray light reaction portion, and also provides a simple lattice structure on a conventional plane. While it was possible to control the spacing and depth of the grating, the microsurface irregularities of various shapes can be formed by using the superposition principle of the microstructure pattern, so that the optical device, the semiconductor device, and the micro electro mechanical system can be formed. Improved to make it easy to manufacture devices that require fine surface irregularities Intended to provide a mask. |